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Spectrum of dipole-active phonons in Nd₂CuO₄ single crystalsABROSIMOV, N. V; BAZHENOV, A. V; TYBULEWICZ, A et al.Soviet physics. Solid state. 1991, Vol 33, Num 2, pp 258-261, issn 0038-5654Article

Hétérogénéité d'impureté et activité électrique du silicium profiléABROSIMOV, N. V; BAZHENOV, A. V; MISHKE, B et al.Kristallografiâ. 1988, Vol 33, Num 4, pp 944-949, issn 0023-4761Article

Obtention de tubes de silicium par étirage de la masse fondue au moyen d'un système de guidageABROSIMOV, N. V; BRANTOV, S. K; TATARCHENKO, V. A et al.Fizika i himiâ obrabotki materialov. 1983, Num 2, pp 75-78, issn 0015-3214Article

Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystalsSMIMOVA, O. V; KALAEV, V. V; MAKAROV, Yu. N et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 141-145, issn 0022-0248, 5 p.Conference Paper

Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloysMARKEVICH, V. P; PEAKER, A. R; CAPAN, I et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 184-187, issn 0921-4526, 4 p.Conference Paper

Interstitial carbon-related defects in Si_1-xGe_x alloysKHIRUNENKO, L. I; POMOZOV, Yu. V; SOSNIN, M. G et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 200-204, issn 0921-4526, 5 p.Conference Paper

R&D progress on second-generation crystals for Laue lens applicationsBARRIERE, N; VON BALLMOOS, P; KNÖDLSEDER, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66880O.1-66880O.11, issn 0277-786X, isbn 978-0-8194-6836-9, 1VolConference Paper

Lateral photovoltage scanning (LPS) method for the visualization of the solid-liquid interface of Si_1-xGe_x single crystalsABROSIMOV, N. V; LÜDGE, A; RIEMANN, H et al.Journal of crystal growth. 2002, Vol 237-39, pp 356-360, issn 0022-0248, 1Conference Paper

The interstitial boron and the boron-germanium complex in silicon-germanium crystalsHATTENDORF, J; ZEITZ, W.-D; ABROSIMOV, N. V et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 535-538, issn 0921-4526Conference Paper

Towards 0.99999 28SiSENNIKOV, P. G; VODOPYANOV, A. V; GODISOV, O. N et al.Solid state communications. 2012, Vol 152, Num 6, pp 455-457, issn 0038-1098, 3 p.Article

Implantation defects and n-type doping in Ge and Ge rich SiGePEAKER, A. R; MARKEVICH, V. P; HAMILTON, B et al.Thin solid films. 2008, Vol 517, Num 1, pp 152-154, issn 0040-6090, 3 p.Conference Paper

Silicon donor and Stokes terahertz lasersPAVLOV, S. G; HÜBERS, H.-W; HOVENIER, J. N et al.Journal of luminescence. 2006, Vol 121, Num 2, pp 304-310, issn 0022-2313, 7 p.Conference Paper

Vacancy-dioxygen centers in Si-rich SiGe alloysKHIRUNENKO, L. I; POMOZOV, Yu. V; SOSNIN, M. G et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 520-524, issn 1369-8001, 5 p.Conference Paper

Stable and metastable configurations of iron atoms in SiGe alloysKOLKOVSKY, V. I; MESLI, A; DOBACZEWSKI, L et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2267-S2272, issn 0953-8984Conference Paper

29Si and 30Si single crystal growth by mini-Czochralski techniqueABROSIMOV, N. V; RIEMANN, H; SCHRÖDER, W et al.Crystal research and technology (1979). 2003, Vol 38, Num 7-8, pp 654-658, issn 0232-1300, 5 p.Article

High-Z crystals for gamma-ray opticsROUSSELLE, J; VON BALLMOOS, P; RIVIERE, E et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7437, issn 0277-786X, isbn 0-8194-7727-3 978-0-8194-7727-9, 74370L.1-74370L.10Conference Paper

Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si_1-xGe_xULYASHIN, A. G; ABROSIMOV, N. V; BENTZEN, A et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 772-776, issn 1369-8001, 5 p.Conference Paper

Interstitial-related reactions in silicon doped with isovalent impuritiesKHIRUNENKO, L. I; KOBZAR, O. O; POMOZOV, Yu. V et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 546-550, issn 0921-4526, 5 p.Conference Paper

Electronic properties of vacancy-oxygen complexes in SiGe alloysMARKEVICH, V. P; PEAKER, A. R; MURIN, L. I et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 790-794, issn 0921-4526, 5 p.Conference Paper

On the formation of boron-germanium pairs in silicon-germanium mixed crystalsHATTENDORF, J; ZEITZ, W.-D; SCHRÖDER, W et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 858-862, issn 0921-4526, 5 p.Conference Paper

Phase equilibria in La(Y)-Ba-Cu-O systems and growth of high-T_c superconductor bulk single crystalsEMEL'CHENKO, G. A; ABROSIMOV, N. V; VAZHENOV, A. V et al.IEEE transactions on magnetics. 1991, Vol 27, Num 2, pp 1146-1149, issn 0018-9464, 4 p., p.2Conference Paper

Oxygen diffusion in Si1―xGex alloysKHIRUNENKO, L. I; POMOZOV, Yu. V; SOSNIN, M. G et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4698-4700, issn 0921-4526, 3 p.Conference Paper

Point defects in SiGe alloys : structural guessing based on electronic transition analysisMESLI, A; KRUSZEWSKI, P; DOBACZEWSKI, L et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S115-S121, SUP1Conference Paper

Iron-aluminium pair reconfiguration processes in SiGe alloysKRUSZEWSKI, P; MESLI, A; DOBACZEWSKI, L et al.Journal of materials science. Materials in electronics. 2007, Vol 18, Num 7, pp 759-762, issn 0957-4522, 4 p.Conference Paper